unisonic technologies co., ltd u f4n20 z p ower mosfet www.unisonic.com.tw 1 of 3 copyright ? 20 1 3 unisonic te chnologies co., ltd qw - r502 - 753.d 4a, 200v n - channel power mosfet ? description the utc uf4n20 z is an n - channel mo de p ower mos fet us ing utc?s advanced technology to provide c u st o mers with a minimum on- state resistance , low gate charge and superior switching performance. ? features * r ds(on ) < 2 @ v gs =10v , i d = 4 a * high s witching speed * t ypical ly 3 .2 nc l ow g ate c harge * 100% a valanche t ested ? symbo l 1.gate 2.drain 3.source sot-223 to-252 1 1 ? ordering information order ing number package pin assign ment packing lead free halogen free 1 2 3 uf4n20 z l - tn 3 - r uf4n20 z g - tn 3 - r to - 252 g d s tape reel uf4n20 z l -aa 3 -r uf4n20 z g -aa 3 -r sot -223 g d s tape reel note : pin assignment: g: gate d: drain s: source (1) r: tape reel (2) aa3: sot-223, tn3: to-252 (3) l: lead free, g: halogen free UF4N20ZL-AA3-R (1)packing type (2)package type (3)lead free
u f4n20 z p ower m osfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw - r502 - 753.d ? absolute maximum ratings parameter symbol rati ngs unit drain - source voltage v dss 200 v gate - source voltage v gss 20 v continuous drain current i d 4 a avalanche current i ar 4 a avalanche energy single pulsed e as 52 mj repetitive e ar 52 mj power dissipation to - 252 p d 1.14 w sot -223 0.8 junc tion temperature t j +150 c storage temperature t stg - 55~+150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device operation is not implied. ? electrical character istics parameter symbol test conditions min typ max unit off characteristics drain - source breakdown voltage bv dss i d = 250 a, v ds =0v 200 v drain - source leakage current i dss v ds = 2 00 v 1 a gate - source leakage current forward i gss v gs = + 20v, v ds =0v 10 a reverse v gs = - 2 0v, v ds =0v - 10 a on characteristics gate threshold voltage v gs (th) i d =250a 2 4 v static drain - source on - state resistance r ds( on ) v gs =10v, i d = 4 a 2 ? on state drain current i d(on) v gs = 10 v, v ds = 10 v , f=1mhz 0 30 a dynamic parameters input capacitance c iss v gs = 0 v, v ds = 25 v, f=1mhz 850 pf output capacitance c oss 250 pf reverse transfer capacitance c rss 200 pf switching parameters total gate charge q g v dd = 50 v, i d = 4 a, i g = 100 a, v gs =10v 3.2 nc gate to source charge q gs 0.64 nc gate to drain charge q gd 1.6 nc turn - o n delay time t d(on) v dd = 30 v, i d = 4 a, r g = 25? , v gs =0~10v 6 ns rise time t r 38 ns turn - o ff delay time t d(off) 11 ns fall - time t f 13 ns source - drain diode ratings and characteristics maximum body - diode continuous current i s 4 a maximum body - diode pulsed current i sm 16 a drain - source diode forward voltage v sd i s = 4 a 0.1 1.48 v
u f4n20 z p ower mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.co m.tw qw - r502 - 753.d ? typical characterist ics drain current vs . drain -source breakdown voltage drain current , i d (a) drain -source breakdown voltage , bv dss (v) 0.7 0 drain current vs . gate threshold voltage drain current , i d (a) gate threshold voltage, v th (v) 2.1 2.8 4.2 1.4 3.5 0 50 100 150 200 250 300 0 50 150 200 250 100 0 50 100 150 200 250 300 drain-source on-state resistance characteristics drain current , i d (a) drain to source voltage, v ds (v) 0 0.2 0.5 0 0.1 0.2 0.3 0.4 v gs =10v, i d =0.425a 0.1 0.3 0.4 0.6 0.6 0 drain current vs. source to drain voltage source to drain voltage, v sd (v) drain current , i d (a) 0.2 0.4 0.6 0.8 1.0 0 0.2 0.4 0.6 0.8 1.0 0.5 1.2 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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